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 PD-95830 RevB
IRAMS10UP60B Series
Plug N DriveTM Integrated Power Module for Appliance Motor Drive
Description
10A, 600V with Internal Shunt Resistor
Features
* * * * * * * * * * * *
International Rectifier's IRAMS10UP60B is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design. An internal shunt is also included and offers easy current feedback and overcurrent monitor for precise and safe operation. A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. Internal Shunt Resistor Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor Fully Isolated Package Low VCE(on) Non Punch Through IGBT Technology Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.4~0.75kW / 85~253 Vac Isolation 2000VRMS /1min
Absolute Maximum Ratings
Parameter VCES V+ Io @ TC=25C Io @ TC=100C Ipk Fp Pd Viso TJ (IGBT & Diodes) TJ (Driver IC) T Description Maximum IGBT Blocking Voltage Positive Bus Input Voltage RMS Phase Current (see Note 1) RMS Phase Current (see Note 1) Maximum Peak Phase Current (tp<100ms) Maximum PWM Carrier Frequency Maximum Power dissipation per Phase Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque Range (M3 screw) Max. Value 600 450 10 5 15 20 20 2000 -40 to +150 -40 to +150 0.8 to 1.0 kHz W VRMS C Nm A Units V
Note 1: Limited by current protection, see table "Inverter Section Electrical Characteristics" on page 3
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IRAMS10UP60B
Internal Electrical Schematic - IRAMS10UP60B
V+ (10)
RS V- (12)
Rg1
Rg3
Rg5
VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2)
23 VS1
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
Rg2
LO1 16
R3 HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) FAULT(21) ITRIP (22) VTH (13) VDD (14) VSS (23) THERMISTOR
24 HO1 25 VB1 1 VCC 2 HIN1 3 HIN2 4 HIN3 5 LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LO2 15
Rg4 Rg6
LO3 14
Driver IC
R4
R1 R2 C1 C2
2
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IRAMS10UP60B
Inverter Section Electrical Characteristics @ TJ=25C
Symbol V(BR)CES V(BR)CES / T VCE(ON) ICES Ilk_module VFM IBUS_Trip Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current-to-Emitter Zero Gate Voltage Phase-tophase Current Diode Forward Voltage Drop Current Protection Threashold (positive going) Min 600 ---------------13.1 Typ --0.57 1.7 2.0 5 10 -1.8 1.3 Max ----2.0 2.4 15 40 50 2.35 1.7 16.4 Units Conditions V V/C V VIN =5V, IC=250A VIN =5V, IC=1.0mA (25C - 150C) IC=5A IC=5A TJ=25C, VDD=15V TJ=150C
A A
V A
VIN =5V, V+=600V VIN =5V, V+=600V, TJ=150C VIN =5V, V+=600V IC=5A IC=5A, TJ=150C Tj =-40C to 150C
Inverter Section Switching Characteristics @ TJ=25C
Symbol Eon Eoff Etot Eon Eoff Etot Erec trr RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-on Swtiching Loss Turn-off Switching Loss Total Switching Loss Diode Rev. Recovery energy Diode Reverse Recovery time Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min ----------------Typ 200 75 275 300 135 435 30 100 FULL SQUARE Max 235 100 335 360 165 525 40 145 Units Conditions IC=5A, V+=400V VDD=15V, L=1mH See CT1 TJ=25C TJ=150C
J
J J
ns
Energy losses include "tail" and diode reverse recovery TJ=150C, V+ =400V VDD=15V, IF =5A, L=1mH TJ=150C, IC=5A, VP=600V V+=480V, VDD =+15V to 0V See CT3
SCSOA
10
---
---
s
TJ=150C, VP=600V, V+=360V, VDD=+15V to 0V See CT2
Thermal Resistance
Symbol Rth(J-C) Parameter Junction to case thermal resistance, each IGBT under inverter operation. Junction to case thermal resistance, each Diode under inverter operation. Case to Sink thermal resistance Min --Typ 4.2 Max 4.7 Units Conditions C/W Flat, greased surface. Heatsink compound thermal conductivity - 1W/mK
Rth(J-C) Rth(C-S)
-----
5.5 0.1
6.5 ---
C/W C/W
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IRAMS10UP60B
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS . (Note 2) 14
Symbol VS1,2,3 VB1,2,3 VDD VIN TJ
Definition High Side offset voltage High Side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, T/ITRIP Juction Temperature
Min -0.3 -0.3 -0.3 -0.3 -40
Max 600 20 20 VSS+15 or VCC+0.3 150
Units V V V V C
Raccomended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased at 15V differential (Note 2). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to VDD
Symbol VB1,2,3 VS1,2,3 VDD VIN
Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage Logic input voltage LIN, HIN
Min VS+12 Note 3 12 VSS
Max VS+20 600 20 VSS+5
Units V V V
Static Electrical Characteristics Driver Function
VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 2)
Symbol VIN,th+ VIN,thVCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH IQBS IQCC ILK IIN+ IIN+ V(ITRIP)
Definition Positive going input threshold Negative going input threshold VCC and VBS supply undervoltage Positive going threshold VCC and VBS supply undervoltage Negative going threshold VCC and VBS supply undervoltage Ilockout hysteresis Quiescent VBS supply current Quiscent VCC supply current Offset Supply Leakage Current Input bias current (OUT=LO) Input bias current (OUT=HI) ITRIP threshold Voltage (OUT=HI or OUT=LO)
Min 3.0 --10.6 10.4 ------------0.44
Typ ----11.1 10.9 0.2 70 1.6 --100 200 0.49
Max --0.8 11.6 11.4 --120 2.3 50 220 300 0.54
Units V V V V V
A
mA
A A A
V
4
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IRAMS10UP60B
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_thTA=25C, unless otherwise specified
Symbol TON TOFF DT I/TTrip TFCLTRL
Definition Input to output propagation turn-on delay time (see fig.11) Input to output propagation turn-off delay time (see fig. 11) Dead Time T/ITrip to six switch to turn-off propagation delay (see fig. 2) Post ITrip to six switch to turn-off clear time (see fig. 2)
Min -
Typ 470 615 290 750 9
Max -
Units ns ns ns ns ms
Internal NTC - Thermistor Characteristics
Parameter R25 R125 B Resistance Resistance B-constant (25-50C) Typ 100 +/- 3% 2.522 10.9% 4250 +/- 2% -40 / 125 1 Units k k k C mW/C TC = 25C Conditions TC = 25C TC = 125C R2 = R 1e [B(1/T2 - 1/T1)]
Temperature Range Typ. Dissipation constant
Internal Current Sensing Resistor - Shunt Characteristics
Parameter Resistance Tollerance Max Power Dissipation Temperature Range 33.3 1% 1% 2.2 -40 / 125 W C Units m
Note 2: For more details, see IR21363 data sheet Note 3: Logic operational for Vs from V- -5V to V- +600V. Logic state held for Vs from V- -5V to V- -VBS. (please refer to DT97-3 for more details)
Thermistor Built-in IRAMS10UP60B
ITRIP (22) FLT (21) VTH (13) NTC VSS (23) Driver IC
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IRAMS10UP60B
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Figure1. Input/Output Timing Diagram Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load.
V+
Itrip 0 0 0 1 HIN1,2,3 0 1 1 X LIN1,2,3 1 0 1 X U,V,W V+ 0 X X
HIN1,2,3 (15,16,17)
IC Driver
Ho U,V,W (8,5,2) Lo
LIN1,2,3 (18,19,20)
6
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IRAMS10UP60B
HIN1,2,3
LIN1,2,3
1
2
3
4
5
6
IBUS
IBUS_trip
6s
1s
50% U,V,W tfltclr Sequence of events: 1-2) Current begins to rise 2) Current reaches IBUS_Trip level 2-3) Current is higher than IBUS_Trip for at least 6s. This value is the worst-case condition with very low over-current. In case of high current (short circuit), the actual delay will be smaller. 3-4) Delay between driver identification of over-current condition and disabling of all outputs 4) Current starts decreasing, eventually reaching 0 5) Current goes below IBUS_trip, the driver starts its auto-reset sequence 6) Driver is automatically reset and normal operation can resume (over-current condition must be removed by the time the drivers automatically resets itself) Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load.
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IRAMS10UP60B
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Name VB3 W,VS3 na VB2 V,VS2 na VB1 U,VS1 na V+ na VVTH VDD HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FAULT Itrip VSS
Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage none Negative Bus Input Voltage Temperature Feedback +15V Main Supply Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Fault indicator Current Sense and Itrip Pin Negative Main Supply
8
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IRAMS10UP60B
Typical Application Connection IRAMS10UP60B
V+ (10)
DC BUS CAPACITORS
V- (12)
RS
Cb1 Cb2 3-ph AC MOTOR Cb3
VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2)
23 VS1 24 HO1 25 VB1 PWM in PWM in PWM in PWM in 1 VCC
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
LO1 16 LO2 15
HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) FAULT(21) ITRIP (22) VTH (13) VDD (14)
0.1
Driver IC
2 HIN1 3 HIN2 4 HIN3 5 LIN1
LO3 14
LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13
CONTROLLER
PWM in PWM in FAULT indicator Current Feedback Temperature Monitor
THERMISTOR
15V
10m
VSS (23)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1mF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. 4. Current sense signal can be obtained from pin 22 and pin 23 5. After approx. 8 ms the FAULT is reset 6.PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation
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IRAMS10UP60B
Maximum RMS Output Current/Phase (A). 10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency (kHz) Tc=100C Tc=110C Tc=120C
Figure 3. Maximum sinusoidal phase current as function of switching frequency V+=400V , Tj=150C, Modulation Depth=0.8, PF=0.6
7 Switching Frequency: Maximum RMS Phase Current (A). 6 5 4 3 2 1 0 1 10 Motor Current Modulation Frequency (Hz) 100 12 kHz 16 kHz 20 kHz
Figure 4. Maximum sinusoidal phase current as function of modulation frequency V+=400V, Tj=150C, Tc=100C, Modulation Depth=0.8, PF=0.6
10
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IRAMS10UP60B
9 8 7 6 Current (A) 5 4 3 2 1 0 -1 0.0 0.1 0.2 0.3 0.4 0.5 Time (s) 0.6 0.7 0.8 0.9 Current Voltage 450 400 350 300 Voltage (V) 250 200 150 100 50 0 -50 1.0
Figure 5. IGBT Turn-on. Typical turn-on waveform @TJ=150C, V+=400V
9 8 7 6 Current (A) 5 4 3 2 1 0 -1 0.0 0.1 0.2 0.3 0.4 0.5 Time (s) 0.6 0.7 0.8 0.9 Current Voltage
450 400 350 300 Voltage (V) 250 200 150 100 50 0 -50 1.0
Figure 6. IGBT Turn-off. Typical turn-off waveform @TJ=150C, V+=400V
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IRAMS10UP60B
1000 Maximum Nominal Minimum
Therimstor Resistance (k )
100
10
1 0 20 40 60 80 Temperature (C) 100 120 140
Figure 7. Variation of thermistor resistance with temperature
180 170 IGBT Junction temperature (C) 160 150 140 130 120 110 100 90 80 60 70 80 90 Thermistor temperature (C) 100 110 120 Vbus=400V Imot=5Arms fsw=20kHz
Figure 8. Estimated maximum IGBT junction temperature with thermistor temperature
12
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IRAMS10UP60B
20 17.5 15 Capacitance (F) 12.5 10 7.5 5 2.5 0 0 1.5 3 4.5 5 6 7.5 9 10 10.5 12 13.5 15 15 16.5 18 19.5 20 Switching Frequency (kHz) 6.8 4.7 3.3 2.2 15
Figure 9. Recommended minimum Bootstrap Capacitor Value Vs Switching Frequency
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IRAMS10UP60B
Figure 11. Switching Parameter Definitions
VCE
50% HIN/LIN
IC
IC
90% IC
VCE HIN/LIN
90% IC
HIN/LIN
50% HIN/LIN
10% VCE
10% IC
10% IC
TON
tr
Figure 11a. Input to Output propagation turn-on delay time
TOFF
tf
Figure 11b. Input to Output propagation turn-off delay time
IF VCE HIN/LIN
Irr trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS10UP60B
V+ 5V
Ho
Hin1,2,3
IC Driver Lo
U,V,W
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Hin1,2,3 1k VCC 5VZD IN 10k Lin1,2,3
IC Driver
Ho
IN
PWM=4s
U,V,W
Lo
Io
Io
VP=Peak Voltage on the IGBT die
Figure CT2. S.C.SOA Circuit
V+
Hin1,2,3 1k VCC 5VZD 10k
IC Driver
Ho
IN
U,V,W
Lo
Io
Lin1,2,3 IN
Io
VP=Peak Voltage on the IGBT die
Figure CT3. R.B.SOA Circuit
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IRAMS10UP60B
Package Outline
note 3 note 2
027-E2D24
IRAMS10UP60B
note 1
Standard pin leadforming option
Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking For mounting instruction, see AN1049
16
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IRAMS10UP60B
Package Outline
note 2 note 3
027-E2D24
IRAMS10UP60B-2
note 1
Pin leadforming option -2
Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 9/04
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